Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

Eric A. G. Webster; Lindsay A. Grant; Robert Henderson

doi:10.1109/TED.2013.2243152

Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

Eric A. G. Webster, Lindsay A. Grant, Robert Henderson

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.

Original language	English
Pages (from-to)	1188-1194
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	3
DOIs	https://doi.org/10.1109/TED.2013.2243152
Publication status	Published - Mar 2013

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10.1109/TED.2013.2243152

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R.
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research

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@article{77261956a82b40f2a29aea2b9b7737bf,

title = "Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up",

abstract = "The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.",

author = "Webster, {Eric A. G.} and Grant, {Lindsay A.} and Robert Henderson",

year = "2013",

month = mar,

doi = "10.1109/TED.2013.2243152",

language = "English",

volume = "60",

pages = "1188--1194",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "3",

}

TY - JOUR

T1 - Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

AU - Webster, Eric A. G.

AU - Grant, Lindsay A.

AU - Henderson, Robert

PY - 2013/3

Y1 - 2013/3

N2 - The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.

AB - The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.

U2 - 10.1109/TED.2013.2243152

DO - 10.1109/TED.2013.2243152

M3 - Article

SN - 0018-9383

VL - 60

SP - 1188

EP - 1194

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

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PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration

Cite this