Tuning Between Mixing and Reactivity in the Ge-Sn System Using Pressure and Temperature

C. Guillaume, George Serghiou, A. Thomson, J. P. Morniroli, D. J. Frost, N. Odling, M. Mezouar

Research output: Contribution to journalArticlepeer-review

Abstract

No bulk GeSn crystal existed prior to this work. Near 10 GPa the two elements resemble each other both electronically and structurally. Synthesis experiments at 10 GPa and 1500 K followed by annealing at 770 K using Ge and Sn starting materials and ex-situ analysis using transmission electron microscopy, scanning electron microscopy, and X-ray diffraction document the recovery of a Ge0.9Sn0.1 solid solution (space group P43212, a = 6.014 (1) Å, c = 7.057 (1) Å, Z = 12).
Original languageEnglish
Pages (from-to)7550-7551
Number of pages2
JournalJournal of the American Chemical Society
Volume131
Issue number22
DOIs
Publication statusPublished - Jan 2009

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