UV induced resistive switching in hybrid polymer metal oxide memristors

Spyros Stathopoulos, Ioulia Tzouvadaki, Themis Prodromakis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention. Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

Original languageEnglish
Article number21130
JournalScientific Reports
Issue number1
Publication statusPublished - 3 Dec 2020


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