Vacancy-related Defects in Ion-implanted and Electron Irradiated Silicon

A. R. Peaker; J. H. Evans-Freeman; P. Y. Y. Kan; I. D. Hawkins; Jonathan Terry; C. Jeynes; L. Rubaldo

Vacancy-related Defects in Ion-implanted and Electron Irradiated Silicon

A. R. Peaker
, J. H. Evans-Freeman
, P. Y. Y. Kan
, I. D. Hawkins
, Jonathan Terry
, C. Jeynes
, L. Rubaldo

School of Engineering

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	143-147
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	71
Publication status	Published - 2000

Cite this

@article{68a18be1848c4ad08ff10f10f212e688,

title = "Vacancy-related Defects in Ion-implanted and Electron Irradiated Silicon",

author = "Peaker, \{A. R.\} and Evans-Freeman, \{J. H.\} and Kan, \{P. Y. Y.\} and Hawkins, \{I. D.\} and Jonathan Terry and C. Jeynes and L. Rubaldo",

year = "2000",

language = "Undefined/Unknown",

volume = "71",

pages = "143--147",

journal = "Materials Science and Engineering: B",

publisher = "Elsevier",

}

TY - JOUR

T1 - Vacancy-related Defects in Ion-implanted and Electron Irradiated Silicon

AU - Peaker, A. R.

AU - Evans-Freeman, J. H.

AU - Kan, P. Y. Y.

AU - Hawkins, I. D.

AU - Terry, Jonathan

AU - Jeynes, C.

AU - Rubaldo, L.

PY - 2000

Y1 - 2000

M3 - Article

VL - 71

SP - 143

EP - 147

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

ER -