Edinburgh Research Explorer

Graeme Ackland

Chair in Computer Simulation

  1. 1994
  2. THEORETICAL-STUDY OF HIGH-DENSITY PHASES OF COVALENT SEMICONDUCTORS .2. EMPIRICAL-TREATMENT

    CLARK, SJ., Ackland, G. & CRAIN, J., 15 Feb 1994, In: Physical Review B: Condensed Matter and Materials Physics. 49, 8, p. 5341-5352 12 p.

    Research output: Contribution to journalArticlepeer-review

  3. Very low energy surface of silicon

    Clark, S. J., Ackland, G. J., Crain, J. & Payne, M. C., 15 Aug 1994, In: Physical Review B. 50, 8, p. 5728-5731 4 p.

    Research output: Contribution to journalArticlepeer-review

  4. Pressure-induced symmetry breaking in tetrahedral networks

    Ackland, G. J., 15 Sep 1994, In: Physical Review B. 50, 11, p. 7389-7392 4 p.

    Research output: Contribution to journalArticlepeer-review

  5. Tetrahedral structures and phase transitions in III-V semiconductors

    Crain, J., Piltz, R. O., Ackland, G. J., Clark, S. J., Payne, M. C., Milman, V., Lin, J. S., Hatton, P. D. & Nam, Y. H., 15 Sep 1994, In: Physical Review B. 50, 12, p. 8389-8401 13 p.

    Research output: Contribution to journalArticlepeer-review

  6. Reversible pressure-induced structural transitions between metastable phases of silicon

    Crain, J., Ackland, G. J., Maclean, J. R., Piltz, R. O., Hatton, P. D. & Pawley, G. S., 1 Nov 1994, In: Physical Review B. 50, 17, p. 13043-13046 4 p.

    Research output: Contribution to journalArticlepeer-review

  7. 1995
  8. A THEORETICAL-STUDY OF PRESSURE EFFECTS ON SELENIUM-I

    CLARK, SJ., ACKLAND, GJ., AKBARZADEH, H. & Ackland, G., 1995, In: Journal of Physics and Chemistry of Solids. 56, 3-4, p. 329-334 6 p.

    Research output: Contribution to journalArticlepeer-review

  9. Dense tetrahedral structures of compound semiconductor

    CRAIN, J., Piltz, RO., Hatton, PD., Clark, SJ. & Ackland, G., 1995, In: Journal of Physics and Chemistry of Solids. 56, 3-4, p. 495-500 6 p.

    Research output: Contribution to journalArticlepeer-review

  10. Erratum: Tetrahedral structures and phase transitions in III-V semiconductors (Phys. Rev. B (1994) 50, (8389))

    Crain, J., Piltz, R. O., Ackland, G. J., Clark, S. J., Payne, M. C., Milman, V., Lin, J. S., Hatton, P. D. & Nam, Y. H., 1995, In: Physical Review B. 52, 23, p. 16936 1 p.

    Research output: Contribution to journalArticlepeer-review

  11. Structure and properties of silicon XII: A complex tetrahedrally bonded phase

    Piltz, R. O., MacLean, J. R., Clark, S. J., Ackland, G. J., Hatton, P. D. & Crain, J., 1995, In: Physical Review B. 52, 6, p. 4072-4085 14 p.

    Research output: Contribution to journalArticlepeer-review

  12. DEFECT, SURFACE AND DISPLACEMENT-THRESHOLD PROPERTIES OF ALPHA-ZIRCONIUM SIMULATED WITH A MANY-BODY POTENTIAL

    ACKLAND, GJ., WOODING, SJ., BACON, DJ. & Ackland, G., Mar 1995, In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 71, 3, p. 553-565 13 p.

    Research output: Contribution to journalArticlepeer-review

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