Edinburgh Research Explorer

A boron nitride - graphene - C60 heterostructure

Research output: Other contribution

  • Claudia Ojeda-Aristizabal
  • Elton Santos
  • Seita Onishi
  • Haider Rasool
  • Jr Velasco Jairo
  • Salman Kahn
  • Aiming Yan
  • Alex Zettl

Related Edinburgh Organisations

Original languageEnglish
Publication statusPublished - 1 Mar 2015

Abstract

We have fabricated a new van-der-Waals heterostructure composed by BN/graphene/C60. We performed transport measurements on the preliminary BN/graphene device finding a sharp Dirac point at the neutrality point. After the deposition of a C60 thin film by thermal evaporation, we have observed a significant n-doping of the heterostructure. This suggests an unusual electron transfer from C60 into the BN/graphene structure. This BN/graphene/C60 heterostructure can be of interest in photovoltaic applications. It can be used to build devices like p-n junctions, where C60 can be easily deposited in defined regions of a graphene junction by the use of a shadow mask. Our results are contrasted with theoretical calculations.

ID: 159093310