Edinburgh Research Explorer

A fast and low-power microelectromechanical system-based non-volatile memory device

Research output: Contribution to journalArticle

Related Edinburgh Organisations

Open Access permissions

Open

Documents

  • Download as Adobe PDF

    Rights statement: This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/

    Final published version, 794 KB, PDF-document

http://www.nature.com/ncomms/journal/v2/n3/full/ncomms1227.html
Original languageEnglish
Article number220
Pages (from-to)-
Number of pages6
JournalNature Communications
Volume2
DOIs
Publication statusPublished - Mar 2011

Abstract

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices.

    Research areas

  • ELECTRON-BEAM LITHOGRAPHY, RESISTIVE SWITCHING MEMORIES, FIELD-EFFECT TRANSISTORS, RANDOM-ACCESS MEMORY, CARBON NANOTUBE

Download statistics

No data available

ID: 1507423