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Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

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    Rights statement: Copyright © 2011 by the American Chemical Society. All rights reserved.

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http://pubs.acs.org/doi/abs/10.1021/nl201280q
Original languageEnglish
Pages (from-to)3569-3575
Number of pages7
JournalNano Letters
Volume11
Issue number9
DOIs
Publication statusPublished - Sep 2011

Abstract

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

    Research areas

  • Carbon nanotube, field effect transistor, graphene, movable gate electrode, MONOLAYER GRAPHENE, RESONATORS, PERFORMANCE, SHEETS

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