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Conductance and polarisability of C-60 films

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Original languageEnglish
Pages (from-to)1434-1438
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume7
Issue number4-5
DOIs
Publication statusPublished - 2007

Abstract

Thin films of C-60 deposited in vacuum are studied using current-voltage (I-V) measurements and atomic force microscopy (AFM). In situ electrical measurements give an average resistivity of ca. 30 M Omega cm for the as-deposited films at room temperature. The I-V dependences are found to correspond to ohmic behaviour but they have a hysteresis shape attributed to remnant polarisation due to the domain structure of the films. AFM images show a grainy surface morphology for the deposited C-60. Temperature dependent measurements in the range 290-365 K provide evidence for a variable range hopping mechanism of conductance with an activation energy of 0.8-1.0 ev. With further temperature increase the C-60 films restructure leading to an increase in grain size and a change of the electrical properties with I-V dependences showing Schottky barrier formation. The effect of oxygen on the conductance of the C-60 films under their exposure to an ambient atmosphere is considered and discussed.

    Research areas

  • fullerene, conductance, polarisation, hysteresis, atomic force microscopy, SINGLE-CRYSTAL C-60, THIN-FILMS, ELECTRICAL-CONDUCTIVITY, DIELECTRIC PERMITTIVITY, SURFACES, OXYGEN, TRANSPORT, DIODES, CARBON, C(60)

ID: 1509227