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Fine structure in the α decay of Bi

Research output: Contribution to journalArticle

  • J. Wauters
  • J.C. Batchelder
  • C.R. Bingham
  • D.J. Blumenthal
  • L.T. Brown
  • L.F. Conticchio
  • C.N. Davids
  • T. Davinson
  • R.J. Irvine
  • D. Seweryniak
  • K.S. Toth
  • W.B. Walters
  • P.J. Woods
  • E.F. Zganjar

Related Edinburgh Organisations

Original languageEnglish
Pages (from-to)1192-1196
Number of pages5
JournalPhysical Review C
Volume55
Issue number3
Publication statusPublished - 1 Mar 1997

Abstract

A detailed α-decay study was performed for Bi produced in the reaction of Mo on Mo at 418 MeV. Evaporation residues were selected in-flight using the Argonne fragment mass analyzer and implanted into a double sided silicon strip detector. The correlation technique between implants and subsequent decays was used to observe new weak α branches of Bi to excited states in Tl. A more precise value of 182(8) keV for the excitation energy of the πs intruder state in Bi was determined. The α decay of the Bi (9/2) ground state to the πd level at 284 keV was observed for the first time. In addition, the α decay of Bi was remeasured. Reduced widths for the α decays of odd-A Bi nuclei to states in their Tl daughters are discussed.

ID: 14705608