Edinburgh Research Explorer

High Pressure Structural Studies of AgInTe2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • T. Bovornratanaraks
  • K. Kotmool
  • K. Yoodee
  • M. I. McMahon
  • D. Ruffolo
  • Malcolm McMahon

Related Edinburgh Organisations

Original languageEnglish
Title of host publicationINTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50
EditorsK Takemura
Place of PublicationBRISTOL
PublisherIOP Publishing Ltd.
Pages-
Number of pages4
ISBN (Print)*****************
DOIs
Publication statusPublished - 2010
EventJoint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology - Tokyo
Duration: 26 Jul 200931 Jul 2009

Conference

ConferenceJoint AIRAPT-22 and HPCJ-50 Conference/International Conference on High Pressure Science and Technology
CityTokyo
Period26/07/0931/07/09

Abstract

The structural phase transformations in the chalcopyrite semiconductor AgInTe2 have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2 at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure.

ID: 1388224