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High-pressure Raman spectroscopy of graphene

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Original languageEnglish
Article number073408
Pages (from-to)-
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume80
Issue number7
DOIs
StatePublished - Aug 2009

Abstract

In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.

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