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High-pressure semiconductor-semimetal transition in TiS2

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)5106-5110
Number of pages5
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume57
Issue number9
Publication statusPublished - 1 Mar 1998

Abstract

We present results of high-pressure single-crystal x-ray-diffraction studies and ab initio pseudopotential calculations of stoichiometric TiS2. Neither present any evidence for a structural phase transition; it is shown that the material undergoes an isostructural semiconductor-semimetal phase transition between 4 and 6 GPa.

    Research areas

  • METAL DICHALCOGENIDES, ELECTRONIC-STRUCTURE, GROUND-STATE, PSEUDOPOTENTIALS, PHOTOEMISSION, KBAR, CELL, GPA

ID: 11409867