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High-pressure simulations of atom-vacancy solid solution

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Original languageEnglish
Pages (from-to)161-164
Number of pages4
JournalDefect and Diffusion Forum
Volume143
Publication statusPublished - 1997
EventInternational Conference on Diffusion in Materials (DIMAT 96) - NORDKIRCHEN, Germany
Duration: 5 Aug 19969 Aug 1996

Abstract

The thermodynamic properties (TP) of atom-vacancy copper-based solid solutions are investigated in Molecular Dynamic calculations with N-body potentials. We show the possibility to analyze the vacancy concentration dependence of TP in the high pressure simulations. Pressure-induced TP of atom-vacancy solid solution prove the necessity of accounting the peculiarities of the; crystal potential response in the study of vacancy-driven properties of solids.

    Research areas

  • thermodynamic properties, n-body potentials, atom-vacancy solid solution, SELF-DIFFUSION, DEPENDENCE, SILICON, METALS

Event

International Conference on Diffusion in Materials (DIMAT 96)

5/08/969/08/96

Germany

Event: Conference

ID: 19413890