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Hydrogenation induced carrier mobility polarity reversal in single layer AlN

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Original languageEnglish
JournalPhysica Status Solidi (RRL)
DOIs
Publication statusPublished - 27 Sep 2017

Abstract

Two-dimensional (2D) materials promote the development of nanoelectronic devices, which requires candidate systems with both a
high carrier mobility and a sufficiently large electronic bandgap. We present a first principles calculation of the intrinsic carrier
mobilities of pristine (1L-AlN) and hydrogenated (1L-AlN-H 2 ) AlN nanosheets. Numerical results show that 1L-AlN shows a hole-
dominated ultra-large carrier mobility (up to 3000 cm 2 V −1 s −1 ). Upon fully-hydrogenation (1L-AlN-H 2 ), the polarity of carrier mobility
is reversed from hole-dominated to electron-dominated. This tunable polarity of intrinsic carrier mobility indicates single layer AlN
nanosheet a promising candidate for future nano-electronics.

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