Research output: Contribution to journal › Article › peer-review
Rights statement: Copyright © 2008 Elsevier B.V. All rights reserved.
Accepted author manuscript, 599 KB, PDF document
Original language | English |
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Pages (from-to) | 206-210 |
Number of pages | 5 |
Journal | Chemical Physics Letters |
Volume | 457 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 20 May 2008 |
Using in situ Raman spectroscopy we investigate single wall carbon nanotube growth on Mo electrodes, using a highly localized resistive heating technique. Small diameter semiconducting single wall nanotubes grow very rapidly when the catalyst support is heated to a temperature of 800 degrees C. The G/D ratio shows an interesting time-dependent behaviour. It first decreases, indicating the presence of amorphous carbon and then significantly increases again after ca. 5 min growth while retaining the position and shape expected for predominantly semiconducting carbon nanotubes.
ID: 1508558