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Phase-transition-induced defect formation in III-V semiconductors

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Phase-transition-induced defect formation in III-V semiconductors. / Crain, J.; Ackland, G.J.; Piltz, R.O.; Hatton, P.D.

In: Physical Review Letters, Vol. 70, No. 6, 1993, p. 814-817.

Research output: Contribution to journalArticle

Harvard

Crain, J, Ackland, GJ, Piltz, RO & Hatton, PD 1993, 'Phase-transition-induced defect formation in III-V semiconductors', Physical Review Letters, vol. 70, no. 6, pp. 814-817.

APA

Crain, J., Ackland, G. J., Piltz, R. O., & Hatton, P. D. (1993). Phase-transition-induced defect formation in III-V semiconductors. Physical Review Letters, 70(6), 814-817.

Vancouver

Crain J, Ackland GJ, Piltz RO, Hatton PD. Phase-transition-induced defect formation in III-V semiconductors. Physical Review Letters. 1993;70(6):814-817.

Author

Crain, J. ; Ackland, G.J. ; Piltz, R.O. ; Hatton, P.D. / Phase-transition-induced defect formation in III-V semiconductors. In: Physical Review Letters. 1993 ; Vol. 70, No. 6. pp. 814-817.