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Pressure-induced symmetry breaking in tetrahedral networks

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)7389-7392
Number of pages4
JournalPhysical Review B
Volume50
Issue number11
Publication statusPublished - 15 Sep 1994

Abstract

Recent experiment and theoretical studies appear to show a great deal of complexity in the high-pressure behavior of tetrahedral semiconductors. We show that the structural stability of silicon and the order of its phase transitions is identical to that of a tetrahedrally coordinated network of rigid rods with spring-loaded joints. We further show how this parameter-free model resolves the recent controversy regarding the first high-pressure phase in silicon. © 1994 The American Physical Society.

    Research areas

  • STRUCTURAL PHASE-TRANSITIONS, COVALENT SYSTEMS, SILICON, MODEL, INSB, GPA, SI, GE

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