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Role of remote interfacial phonons in the resistivity of graphene

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Original languageEnglish
Article number043104
Number of pages4
JournalApplied Physics Letters
Early online date25 Jul 2019
Publication statusE-pub ahead of print - 25 Jul 2019


The temperature (T) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400K for samples prepared on various substrates: HfO2, SiO2, and h-BN. The resistivity of graphene shows a linear T-dependence at low T and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.

    Research areas

  • graphene, interfacial phonons

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