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Stabilization of boron carbide via silicon doping

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Stabilization of boron carbide via silicon doping. / Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

In: Journal of Physics: Condensed Matter, Vol. 27, No. 1, 015401, 14.01.2015.

Research output: Contribution to journalArticle

Harvard

Proctor, JE, Bhakhri, V, Hao, R, Prior, TJ, Scheler, T, Gregoryanz, E, Chhowalla, M & Giulani, F 2015, 'Stabilization of boron carbide via silicon doping', Journal of Physics: Condensed Matter, vol. 27, no. 1, 015401. https://doi.org/10.1088/0953-8984/27/1/015401

APA

Proctor, J. E., Bhakhri, V., Hao, R., Prior, T. J., Scheler, T., Gregoryanz, E., ... Giulani, F. (2015). Stabilization of boron carbide via silicon doping. Journal of Physics: Condensed Matter, 27(1), [015401]. https://doi.org/10.1088/0953-8984/27/1/015401

Vancouver

Proctor JE, Bhakhri V, Hao R, Prior TJ, Scheler T, Gregoryanz E et al. Stabilization of boron carbide via silicon doping. Journal of Physics: Condensed Matter. 2015 Jan 14;27(1). 015401. https://doi.org/10.1088/0953-8984/27/1/015401

Author

Proctor, J. E. ; Bhakhri, V. ; Hao, R. ; Prior, T. J. ; Scheler, T. ; Gregoryanz, E. ; Chhowalla, M. ; Giulani, F. / Stabilization of boron carbide via silicon doping. In: Journal of Physics: Condensed Matter. 2015 ; Vol. 27, No. 1.